GD25LQ255ESIGR GigaDevice Semiconductor (HK) Limited

Description: 256MBIT, 1.8V, SOP8 208MIL, INDU, Memory Organization: 32M x 8, Access Time: 6 ns, Memory Interface: SPI - Quad I/O, QPI, Write Cycle Time - Word, Page: 60µs, 2.4ms, Part Status: Active, Supplier Device Package: 8-SOP, Memory Format: FLASH, Clock Frequency: 133 MHz, Technology: FLASH - NOR (SLC), Voltage - Supply: 1.65V ~ 2V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 256Mbit, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.209", 5.30mm Width), Packaging: Tape & Reel (TR).