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GD25Q16ENIGR

GD25Q16ENIGR GigaDevice Semiconductor (HK) Limited

DS-00473-GD25Q16E-Rev1.2.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 16MBIT SPI/QUAD 8USON
Memory Organization: 2M x 8
Access Time: 7 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 70µs, 2ms
Part Status: Active
Supplier Device Package: 8-USON (4x3)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
DigiKey Programmable: Not Verified
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 6000 шт
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Технічний опис GD25Q16ENIGR GigaDevice Semiconductor (HK) Limited

Description: IC FLASH 16MBIT SPI/QUAD 8USON, Memory Organization: 2M x 8, Access Time: 7 ns, Memory Interface: SPI - Quad I/O, Write Cycle Time - Word, Page: 70µs, 2ms, Part Status: Active, Supplier Device Package: 8-USON (4x3), Memory Format: FLASH, Clock Frequency: 133 MHz, Technology: FLASH - NOR, Voltage - Supply: 2.7V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), DigiKey Programmable: Not Verified, Memory Type: Non-Volatile, Memory Size: 16Mbit, Mounting Type: Surface Mount, Package / Case: 8-UDFN Exposed Pad, Packaging: Tape & Reel (TR).

Інші пропозиції GD25Q16ENIGR

Фото Назва Виробник Інформація Доступність Ціна
GD25Q16ENIGR GD25Q16ENIGR GigaDevice Semiconductor (HK) Limited DS-00473-GD25Q16E-Rev1.2.pdf Description: IC FLASH 16MBIT SPI/QUAD 8USON
Memory Organization: 2M x 8
Access Time: 7 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 70µs, 2ms
Part Status: Active
Supplier Device Package: 8-USON (4x3)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
товару немає в наявності
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GD25Q16ENIGR GigaDevice GigaDevice_Product_Selection_Guide-1947349.pdf NOR Flash
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GD25Q16ENIGR DS-00473-GD25Q16E-Rev1.2.pdf
GD25Q16ENIGR
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 16MBIT SPI/QUAD 8USON
Memory Organization: 2M x 8
Access Time: 7 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 70µs, 2ms
Part Status: Active
Supplier Device Package: 8-USON (4x3)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
GD25Q16ENIGR GigaDevice_Product_Selection_Guide-1947349.pdf
Виробник: GigaDevice
NOR Flash
товару немає в наявності
В кошику  од. на суму  грн.