GD50HFU120C1S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Case: C1 34mm
Collector current: 50A
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
кількість в упаковці: 24 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Case: C1 34mm
Collector current: 50A
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
кількість в упаковці: 24 шт
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Технічний опис GD50HFU120C1S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A, Case: C1 34mm, Collector current: 50A, Pulsed collector current: 100A, Max. off-state voltage: 1.2kV, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Technology: NPT Ultra Fast IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Gate-emitter voltage: ±20V, кількість в упаковці: 24 шт.
Інші пропозиції GD50HFU120C1S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD50HFU120C1S | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Case: C1 34mm Collector current: 50A Pulsed collector current: 100A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Gate-emitter voltage: ±20V |
товар відсутній |