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GD600HFY120P1S STARPOWER SEMICONDUCTOR

Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Semiconductor structure: transistor/transistor
Case: P1.0
Gate-emitter voltage: ±20V
Collector current: 600A
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Pulsed collector current: 1.2kA

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Мінімальне замовлення: 9 шт

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Технічний опис GD600HFY120P1S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Max. off-state voltage: 1.2kV, Electrical mounting: screw, Semiconductor structure: transistor/transistor, Case: P1.0, Gate-emitter voltage: ±20V, Collector current: 600A, Topology: IGBT half-bridge, Type of semiconductor module: IGBT, Technology: Advanced Trench FS IGBT, Mechanical mounting: screw, Pulsed collector current: 1.2kA.