GD600HFY120P1S STARPOWER SEMICONDUCTOR


Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Pulsed collector current: 1.2kA
Collector current: 600A
Gate-emitter voltage: ±20V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: P1.0
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 9 шт
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Технічний опис GD600HFY120P1S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Pulsed collector current: 1.2kA, Collector current: 600A, Gate-emitter voltage: ±20V, Electrical mounting: screw, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Type of module: IGBT, Case: P1.0, Technology: Advanced Trench FS IGBT, Topology: IGBT half-bridge, кількість в упаковці: 9 шт.

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GD600HFY120P1S Виробник : STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Pulsed collector current: 1.2kA
Collector current: 600A
Gate-emitter voltage: ±20V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: P1.0
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
товар відсутній