GD75FFY120C6S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
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Технічний опис GD75FFY120C6S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Type of semiconductor module: IGBT, Topology: IGBT three-phase bridge; NTC thermistor, Case: C6 62mm, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Technology: Advanced Trench FS IGBT, Gate-emitter voltage: ±20V, Collector current: 75A, Pulsed collector current: 150A.