GD800SGX170C3S STARPOWER
Виробник: STARPOWER
Description: STARPOWER - GD800SGX170C3S - IGBT-Modul, Zweifach, gemeinsamer Emitter, gemeinsames Gate, 800 A, 2.3 V, 5.75 kW, 150 °C
tariffCode: 85412900
Transistormontage: Platte
euEccn: NLR
rohsCompliant: YES
IGBT-Technologie: Trench/Feldstop
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 2.3V
IGBT-Anschluss: Lötfahne
Verlustleistung: 5.75kW
SVHC: No SVHC (17-Jan-2022)
Bauform - Transistor: -
Dauerkollektorstrom: 800A
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.7kV
IGBT-Konfiguration: Zweifach, gemeinsamer Emitter, gemeinsames Gate
productTraceability: No
usEccn: EAR99
Betriebstemperatur, max.: 150°C
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Технічний опис GD800SGX170C3S STARPOWER
Description: STARPOWER - GD800SGX170C3S - IGBT-Modul, Zweifach, gemeinsamer Emitter, gemeinsames Gate, 800 A, 2.3 V, 5.75 kW, 150 °C, tariffCode: 85412900, Transistormontage: Platte, euEccn: NLR, rohsCompliant: YES, IGBT-Technologie: Trench/Feldstop, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Kollektor-Emitter-Sättigungsspannung: 2.3V, IGBT-Anschluss: Lötfahne, Verlustleistung: 5.75kW, SVHC: No SVHC (17-Jan-2022), Bauform - Transistor: -, Dauerkollektorstrom: 800A, Produktpalette: -, Kollektor-Emitter-Spannung, max.: 1.7kV, IGBT-Konfiguration: Zweifach, gemeinsamer Emitter, gemeinsames Gate, productTraceability: No, usEccn: EAR99, Betriebstemperatur, max.: 150°C.
Інші пропозиції GD800SGX170C3S
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| GD800SGX170C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.7kV Collector current: 800A Case: C3 130mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.6kA Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 8 шт В кошику од. на суму грн. |
| GD800SGX170C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 800A
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 800A
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Technology: Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 8 шт
В кошику
од. на суму грн.