GE1004 Harris Corporation
Виробник: Harris Corporation
Description: DIODE GEN PURP 200V 1A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-204AE
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 533+ | 42.02 грн |
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Технічний опис GE1004 Harris Corporation
Description: DIODE GEN PURP 200V 1A, Current - Reverse Leakage @ Vr: 2 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-204AE, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 45pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-204AE, Packaging: Bulk.