GE1004 Harris Corporation
Виробник: Harris CorporationDescription: DIODE GEN PURP 200V 1A
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TO-204AE
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 1166 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 533+ | 42.07 грн |
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Технічний опис GE1004 Harris Corporation
Description: DIODE GEN PURP 200V 1A, Packaging: Bulk, Package / Case: TO-204AE, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 45pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: TO-204AE, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A, Current - Reverse Leakage @ Vr: 2 µA @ 200 V.