GE12050EEA3 GE Aerospace

Description: SIC 6N-CH 1200V 475A MODULE, Part Status: Active, Supplier Device Package: Module, Vgs(th) (Max) @ Id: 4.5V @ 160mA, FET Feature: Silicon Carbide (SiC), Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V, Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V, Current - Continuous Drain (Id) @ 25°C: 475A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 1250W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -55°C ~ 150°C (Tc), Configuration: 6 N-Channel (3-Phase Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.