GE1301 Harris Corporation
Виробник: Harris CorporationDescription: DIODE GEN PURP 50V 6A AL-4
Packaging: Bulk
Package / Case: DO-204, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: AL-4
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 1164 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 207+ | 105.93 грн |
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Технічний опис GE1301 Harris Corporation
Description: DIODE GEN PURP 50V 6A AL-4, Packaging: Bulk, Package / Case: DO-204, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 100pF @ 4V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: AL-4, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A, Current - Reverse Leakage @ Vr: 5 µA @ 50 V.