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GE17042CCA3

GE17042CCA3 GE Aerospace

1700v-half-bridge-silicon-carbide-power-module-GE17042CCA3.pdf
Виробник: GE Aerospace
Description: 1700V 425A SiC Half-Bridge
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Power - Max: 1250W
Technology: Silicon Carbide (SiC)
Operating Temperature: 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+98917.41 грн
В кошику  од. на суму  грн.
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Технічний опис GE17042CCA3 GE Aerospace

Description: 1700V 425A SiC Half-Bridge, Current - Continuous Drain (Id) @ 25°C: 425A (Tc), Drain to Source Voltage (Vdss): 1700V (1.7kV), Power - Max: 1250W, Technology: Silicon Carbide (SiC), Operating Temperature: 175°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk, Part Status: Active, Vgs(th) (Max) @ Id: 4.5V @ 160mA, Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V, Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V.