GP3T080A120J SemiQ

Description: GEN3 1200V 80M SIC MOSFET TO-263, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V, Power Dissipation (Max): 155W (Tc), Vgs(th) (Max) @ Id: 4V @ 5mA, Supplier Device Package: TO-263-7L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V.