Продукція > SEMIQ > GP3T080A120J

GP3T080A120J SemiQ

GP3T080A120J.pdf Виробник: SemiQ
Description: GEN3 1200V 80M SIC MOSFET TO-263
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+414.71 грн
50+210.15 грн
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис GP3T080A120J SemiQ

Description: GEN3 1200V 80M SIC MOSFET TO-263, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V, Power Dissipation (Max): 155W (Tc), Vgs(th) (Max) @ Id: 4V @ 5mA, Supplier Device Package: TO-263-7L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V.