GP3T080A120TS SemiQ
Виробник: SemiQDescription: GEN3 1200V 80M SIC MOSFET TSPAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TSPAK
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 414.71 грн |
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Технічний опис GP3T080A120TS SemiQ
Description: GEN3 1200V 80M SIC MOSFET TSPAK, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V, Power Dissipation (Max): 102W (Tc), Vgs(th) (Max) @ Id: 4V @ 5mA, Supplier Device Package: TSPAK, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V.