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GP3T080A120TS SemiQ

GP3T080A120TS.pdf
Виробник: SemiQ
Description: GEN3 1200V 80M SIC MOSFET TSPAK
Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -8V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TSPAK
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant
Packaging: Tube
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+392.50 грн
В кошику  од. на суму  грн.
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Технічний опис GP3T080A120TS SemiQ

Description: GEN3 1200V 80M SIC MOSFET TSPAK, Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -8V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TSPAK, Vgs(th) (Max) @ Id: 4V @ 5mA, Power Dissipation (Max): 102W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant, Packaging: Tube.