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GPA015A120MN-ND

GPA015A120MN-ND SemiQ

GPA015A120MN-ND_REV2.1_10-13.pdf
Виробник: SemiQ
Description: IGBT NPT/TRENCH 1200V 30A TO-3PN
Reverse Recovery Time (trr): 320 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 212 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Gate Charge: 210 nC
Test Condition: 600V, 15A, 10Ohm, 15V
Switching Energy: 1.61mJ (on), 530µJ (off)
Td (on/off) @ 25°C: 25ns/166ns
IGBT Type: NPT and Trench
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
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Технічний опис GPA015A120MN-ND SemiQ

Description: IGBT NPT/TRENCH 1200V 30A TO-3PN, Reverse Recovery Time (trr): 320 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube, Power - Max: 212 W, Current - Collector Pulsed (Icm): 45 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 30 A, Gate Charge: 210 nC, Test Condition: 600V, 15A, 10Ohm, 15V, Switching Energy: 1.61mJ (on), 530µJ (off), Td (on/off) @ 25°C: 25ns/166ns, IGBT Type: NPT and Trench, Supplier Device Package: TO-3PN, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A.