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GPA020A120MN-FD

GPA020A120MN-FD SemiQ

GPA020A120MN-FD_REV1.1_10-13.pdf
Виробник: SemiQ
Description: IGBT 1200V 40A 223W TO3PN
Gate Charge: 210 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 2.8mJ (on), 480µJ (off)
Td (on/off) @ 25°C: 30ns/150ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Reverse Recovery Time (trr): 425 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 223 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
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Технічний опис GPA020A120MN-FD SemiQ

Description: IGBT 1200V 40A 223W TO3PN, Gate Charge: 210 nC, Test Condition: 600V, 20A, 10Ohm, 15V, Switching Energy: 2.8mJ (on), 480µJ (off), Td (on/off) @ 25°C: 30ns/150ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3PN, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Reverse Recovery Time (trr): 425 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube, Power - Max: 223 W, Current - Collector Pulsed (Icm): 60 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 40 A, Part Status: Obsolete.