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GPA030A135MN-FDR

GPA030A135MN-FDR SemiQ

GPA030A135MN-FDR_REV0.0_2-14.pdf
Виробник: SemiQ
Description: IGBT 1350V 60A 329W TO3PN
Power - Max: 329 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 300 nC
Test Condition: 600V, 30A, 5Ohm, 15V
Switching Energy: 4.4mJ (on), 1.18mJ (off)
Td (on/off) @ 25°C: 30ns/145ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Reverse Recovery Time (trr): 450 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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Технічний опис GPA030A135MN-FDR SemiQ

Description: IGBT 1350V 60A 329W TO3PN, Power - Max: 329 W, Current - Collector Pulsed (Icm): 90 A, Voltage - Collector Emitter Breakdown (Max): 1350 V, Current - Collector (Ic) (Max): 60 A, Part Status: Obsolete, Gate Charge: 300 nC, Test Condition: 600V, 30A, 5Ohm, 15V, Switching Energy: 4.4mJ (on), 1.18mJ (off), Td (on/off) @ 25°C: 30ns/145ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3PN, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A, Reverse Recovery Time (trr): 450 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.