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GPA042A100L-ND

GPA042A100L-ND SemiQ

GPA042A100L-ND_REV1_8-12.pdf
Виробник: SemiQ
Description: IGBT 1000V 60A 463W TO264
Current - Collector (Ic) (Max): 60 A
Gate Charge: 405 nC
Test Condition: 600V, 60A, 50Ohm, 15V
Switching Energy: 13.1mJ (on), 6.3mJ (off)
Td (on/off) @ 25°C: 230ns/1480ns
IGBT Type: NPT and Trench
Supplier Device Package: TO-264
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Reverse Recovery Time (trr): 465 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 463 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
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Технічний опис GPA042A100L-ND SemiQ

Description: IGBT 1000V 60A 463W TO264, Current - Collector (Ic) (Max): 60 A, Gate Charge: 405 nC, Test Condition: 600V, 60A, 50Ohm, 15V, Switching Energy: 13.1mJ (on), 6.3mJ (off), Td (on/off) @ 25°C: 230ns/1480ns, IGBT Type: NPT and Trench, Supplier Device Package: TO-264, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A, Reverse Recovery Time (trr): 465 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Power - Max: 463 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 1000 V.