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GPI040A060MN-FD

GPI040A060MN-FD SemiQ

GPI040A060MN-FD_REV0_9-13.pdf
Виробник: SemiQ
Description: IGBT 600V 80A 231W TO3PN
Power - Max: 231 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 173 nC
Test Condition: 400V, 40A, 5Ohm, 15V
Switching Energy: 1.46mJ (on), 540µJ (off)
Td (on/off) @ 25°C: 35ns/85ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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Технічний опис GPI040A060MN-FD SemiQ

Description: IGBT 600V 80A 231W TO3PN, Power - Max: 231 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 80 A, Gate Charge: 173 nC, Test Condition: 400V, 40A, 5Ohm, 15V, Switching Energy: 1.46mJ (on), 540µJ (off), Td (on/off) @ 25°C: 35ns/85ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3PN, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A, Reverse Recovery Time (trr): 60 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.