GPI65005DF GaNPower
Виробник: GaNPower
Description: GANFET N-CH 650V 5A DFN 5X6
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.4V @ 1.75mA
Current - Continuous Drain (Id) @ 25°C: 5A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2+ | 186.55 грн |
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Технічний опис GPI65005DF GaNPower
Description: GANFET N-CH 650V 5A DFN 5X6, Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 6 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +7.5V, -12V, Drive Voltage (Max Rds On, Min Rds On): 6V, Part Status: Active, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 1.4V @ 1.75mA, Current - Continuous Drain (Id) @ 25°C: 5A, FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR).