GPI65007DF56 GaNPower
Виробник: GaNPower
Description: GaNFET N-CH 650V 7A DFN5x6
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 76.1 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.5V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 7A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
| Кількість | Ціна |
|---|---|
| 2+ | 310.39 грн |
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Технічний опис GPI65007DF56 GaNPower
Description: GaNFET N-CH 650V 7A DFN5x6, Part Status: Active, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 76.1 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +7.5V, -12V, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs(th) (Max) @ Id: 1.5V @ 3.5mA, Current - Continuous Drain (Id) @ 25°C: 7A, FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.