GPI65008DF68 GaNPower
Виробник: GaNPower
Description: GaNFET N-CH 650V 8A DFN6x8
Part Status: Active
Vgs(th) (Max) @ Id: 1.7V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C: 8A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
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Технічний опис GPI65008DF68 GaNPower
Description: GaNFET N-CH 650V 8A DFN6x8, Part Status: Active, Vgs(th) (Max) @ Id: 1.7V @ 3.5mA, Current - Continuous Drain (Id) @ 25°C: 8A, FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +7.5V, -12V, Drive Voltage (Max Rds On, Min Rds On): 6V.