GPI65030DFN GaNPower
Виробник: GaNPower
Description: GANFET N-CH 650V 30A DFN8X8
Current - Continuous Drain (Id) @ 25°C: 30A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7.5V, -12V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.2V @ 3.5mA
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Технічний опис GPI65030DFN GaNPower
Description: GANFET N-CH 650V 30A DFN8X8, Current - Continuous Drain (Id) @ 25°C: 30A, FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +7.5V, -12V, Drive Voltage (Max Rds On, Min Rds On): 6V, Part Status: Active, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 1.2V @ 3.5mA.