GPIRGIC15DFV GaNPower
Виробник: GaNPower
Description: Power IC based on Power GaN HEMT
Drain to Source Voltage (Vdss): 900 V
Drive Voltage (Max Rds On, Min Rds On): 5V, 8V
Part Status: Active
Supplier Device Package: 8-DFN (8x8)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 0V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Bag
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
| Кількість | Ціна |
|---|---|
| 5+ | 733.65 грн |
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Технічний опис GPIRGIC15DFV GaNPower
Description: Power IC based on Power GaN HEMT, Drain to Source Voltage (Vdss): 900 V, Drive Voltage (Max Rds On, Min Rds On): 5V, 8V, Part Status: Active, Supplier Device Package: 8-DFN (8x8), Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 0V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-WDFN Exposed Pad, Packaging: Bag, FET Type: N-Channel, Technology: GaNFET (Gallium Nitride).