GSFG65R900 Good-Ark Semiconductor
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5.00A, 650
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
| Кількість | Ціна |
|---|---|
| 4+ | 86.21 грн |
| 75+ | 36.27 грн |
| 150+ | 32.33 грн |
| 525+ | 25.08 грн |
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Технічний опис GSFG65R900 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5.00A, 650, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-251, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 42W (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V.