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GSFH80R900

GSFH80R900 Good-Ark Semiconductor

GSFH80R900.pdf
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 6.00A, 800
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 987 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
4+101.74 грн
50+46.35 грн
100+41.30 грн
500+30.41 грн
Мінімальне замовлення: 4 шт
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Технічний опис GSFH80R900 Good-Ark Semiconductor

Description: MOSFET, N-CH, SINGLE, 6.00A, 800, Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 80W (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.