Продукція > GOOD-ARK SEMICONDUCTOR > GSFH80R900
GSFH80R900

GSFH80R900 Good-Ark Semiconductor

GSFH80R900.pdf Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 6.00A, 800
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 100 V
на замовлення 994 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.99 грн
50+54.52 грн
100+48.57 грн
500+35.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис GSFH80R900 Good-Ark Semiconductor

Description: MOSFET, N-CH, SINGLE, 6.00A, 800, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 100 V.