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GSID200A170S3B1

GSID200A170S3B1 SemiQ


GSID200A170S3B1.pdf Виробник: SemiQ
Description: IGBT MODULE 1200V 400A 1630W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: D3
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1630 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
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Технічний опис GSID200A170S3B1 SemiQ

Description: IGBT MODULE 1200V 400A 1630W D3, Packaging: Bulk, Package / Case: D-3 Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: D3, Current - Collector (Ic) (Max): 400 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1630 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 26 nF @ 25 V.