GSID600A120S4B1 SemiQ
Виробник: SemiQ
Description: IGBT MOD 1200V 1130A 3060W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3060 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 51 nF @ 25 V
Description: IGBT MOD 1200V 1130A 3060W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3060 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 51 nF @ 25 V
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Технічний опис GSID600A120S4B1 SemiQ
Description: IGBT MOD 1200V 1130A 3060W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A, NTC Thermistor: Yes, Supplier Device Package: Module, Current - Collector (Ic) (Max): 1130 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 3060 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 51 nF @ 25 V.