Продукція > GOFORD SEMICONDUCTOR > GT043N15Q
GT043N15Q

GT043N15Q Goford Semiconductor

GT043N15Q.pdf Виробник: Goford Semiconductor
Description: MOSFET 150V 180A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+319.19 грн
30+171.30 грн
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис GT043N15Q Goford Semiconductor

Description: MOSFET 150V 180A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V.