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GT10J312(Q)

GT10J312(Q) Toshiba Semiconductor and Storage

GT10J312.pdf
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 600V 10A 60W TO220SM
Power - Max: 60 W
Current - Collector Pulsed (Icm): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 300V, 10A, 100Ohm, 15V
Td (on/off) @ 25°C: 400ns/400ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Reverse Recovery Time (trr): 200 ns
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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Технічний опис GT10J312(Q) Toshiba Semiconductor and Storage

Description: IGBT 600V 10A 60W TO220SM, Power - Max: 60 W, Current - Collector Pulsed (Icm): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 10 A, Test Condition: 300V, 10A, 100Ohm, 15V, Td (on/off) @ 25°C: 400ns/400ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A, Reverse Recovery Time (trr): 200 ns, Input Type: Standard, Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.