Технічний опис GT250P10M GOFORD Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -56A; 173.6W; TO263, Kind of channel: enhancement, Type of transistor: P-MOSFET, Technology: SGT, Mounting: SMD, Case: TO263, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -56A, Gate charge: 73nC, Gate-source voltage: ±20V, Power dissipation: 173.6W.
Інші пропозиції GT250P10M
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| GT250P10M | GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -56A; 173.6W; TO263 Kind of channel: enhancement Type of transistor: P-MOSFET Technology: SGT Mounting: SMD Case: TO263 Polarisation: unipolar Drain-source voltage: -100V Drain current: -56A Gate charge: 73nC Gate-source voltage: ±20V Power dissipation: 173.6W |
товару немає в наявності |
В кошику од. на суму грн. |
| GT250P10M |
Виробник: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -56A; 173.6W; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SGT
Mounting: SMD
Case: TO263
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -56A
Gate charge: 73nC
Gate-source voltage: ±20V
Power dissipation: 173.6W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -56A; 173.6W; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SGT
Mounting: SMD
Case: TO263
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -56A
Gate charge: 73nC
Gate-source voltage: ±20V
Power dissipation: 173.6W
товару немає в наявності
В кошику
од. на суму грн.