GT50J121(Q) Toshiba Semiconductor and Storage

Description: IGBT 600V 50A 240W TO3P LH, Supplier Device Package: TO-3P(LH), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A, Input Type: Standard, Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3PL, Packaging: Tube, Power - Max: 240 W, Current - Collector Pulsed (Icm): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 50 A, Part Status: Obsolete, Test Condition: 300V, 50A, 13Ohm, 15V, Switching Energy: 1.3mJ (on), 1.34mJ (off), Td (on/off) @ 25°C: 90ns/300ns.