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GT8G133(TE12L,Q)

GT8G133(TE12L,Q) Toshiba Semiconductor and Storage

GT8G133.pdf
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 400V 600MW 8TSSOP
Power - Max: 600 mW
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Part Status: Obsolete
Td (on/off) @ 25°C: 1.7µs/2µs
Supplier Device Package: 8-TSSOP
Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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Технічний опис GT8G133(TE12L,Q) Toshiba Semiconductor and Storage

Description: IGBT 400V 600MW 8TSSOP, Power - Max: 600 mW, Current - Collector Pulsed (Icm): 150 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Part Status: Obsolete, Td (on/off) @ 25°C: 1.7µs/2µs, Supplier Device Package: 8-TSSOP, Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A, Input Type: Standard, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).