GT8G133(TE12L,Q) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: IGBT 400V 600MW 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A
Supplier Device Package: 8-TSSOP
Td (on/off) @ 25°C: 1.7µs/2µs
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 600 mW
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Технічний опис GT8G133(TE12L,Q) Toshiba Semiconductor and Storage
Description: IGBT 400V 600MW 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A, Supplier Device Package: 8-TSSOP, Td (on/off) @ 25°C: 1.7µs/2µs, Part Status: Obsolete, Voltage - Collector Emitter Breakdown (Max): 400 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 600 mW.