HAT1044M-EL-E Renesas

Description: HAT1044M-EL-E - SILICON P CHANNE, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.05W (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.