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HAT1093C-EL-E Renesas

r07ds0605ej0700_hat1093c.pdf Виробник: Renesas
Description: HAT1093C - P-CHANNEL POWER MOSFE
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 6-CMFPAK
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 10 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1200+16.46 грн
Мінімальне замовлення: 1200
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Технічний опис HAT1093C-EL-E Renesas

Description: HAT1093C - P-CHANNEL POWER MOSFE, Packaging: Bulk, Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 54mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: 6-CMFPAK, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 10 V.