HAT2043R-EL-E

HAT2043R-EL-E Renesas Electronics Corporation


RNCCS02165-1.pdf?t.download=true&u=5oefqw Виробник: Renesas Electronics Corporation
Description: MOSFET 2N-CH 30V 8A 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
на замовлення 2267 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
250+81.82 грн
Мінімальне замовлення: 250
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Технічний опис HAT2043R-EL-E Renesas Electronics Corporation

Description: MOSFET 2N-CH 30V 8A 8SOP, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 10V, Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, FET Feature: Logic Level Gate, 4V Drive, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP.