HAT2168HWS-E Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 30A 5LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V
Description: MOSFET N-CH 30V 30A 5LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V
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Технічний опис HAT2168HWS-E Renesas Electronics Corporation
Description: MOSFET N-CH 30V 30A 5LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V, Power Dissipation (Max): 15W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: LFPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V.