HAT2170HWS-E Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 45A 5LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 22.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 10 V
Description: MOSFET N-CH 40V 45A 5LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 22.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 10 V
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Технічний опис HAT2170HWS-E Renesas Electronics Corporation
Description: MOSFET N-CH 40V 45A 5LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 22.5A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: LFPAK, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 10 V.