HAT2196C-EL-E Renesas
Виробник: Renesas
Description: HAT2196C - N-CHANNEL POWER MOSFE
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 1.3A, 4.5V
Power Dissipation (Max): 850mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Supplier Device Package: 6-CMFPAK
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Description: HAT2196C - N-CHANNEL POWER MOSFE
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 1.3A, 4.5V
Power Dissipation (Max): 850mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Supplier Device Package: 6-CMFPAK
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1086+ | 19.97 грн |
Відгуки про товар
Написати відгук
Технічний опис HAT2196C-EL-E Renesas
Description: HAT2196C - N-CHANNEL POWER MOSFE, Packaging: Bulk, Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 58mOhm @ 1.3A, 4.5V, Power Dissipation (Max): 850mW (Ta), Vgs(th) (Max) @ Id: 1.4V @ 1mA, Supplier Device Package: 6-CMFPAK, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V.