HAT2199R-EL-E Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: MOSFET N-CH 30V 11A 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 8-SOP
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 325+ | 65.76 грн |
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Технічний опис HAT2199R-EL-E Renesas Electronics Corporation
Description: MOSFET N-CH 30V 11A 8SOP, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 5.5A, 10V, Power Dissipation (Max): 2W (Ta), Supplier Device Package: 8-SOP, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V.