HAT2287WP-EL-E Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: MOSFET N-CH 200V 17A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK (3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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Технічний опис HAT2287WP-EL-E Renesas Electronics Corporation
Description: MOSFET N-CH 200V 17A 8WPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 94mOhm @ 8.5A, 10V, Power Dissipation (Max): 30W (Tc), Supplier Device Package: 8-WPAK (3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.