HER503BULK EIC SEMICONDUCTOR INC.
Виробник: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 200V 5A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bag
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Технічний опис HER503BULK EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 200V 5A DO201AD, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: DO-201AD, Current - Average Rectified (Io): 5A, Capacitance @ Vr, F: 50pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AD, Axial, Packaging: Bag.