HER601-T Diodes Incorporated
Виробник: Diodes IncorporatedDescription: DIODE GEN PURP 50V 6A R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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Технічний опис HER601-T Diodes Incorporated
Description: DIODE GEN PURP 50V 6A R-6, Packaging: Tape & Reel (TR), Package / Case: R-6, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 60 ns, Technology: Standard, Current - Average Rectified (Io): 6A, Supplier Device Package: R-6, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V.
Інші пропозиції HER601-T
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HER601-T | Виробник : Diodes Incorporated |
Description: DIODE GEN PURP 50V 6A R-6 Packaging: Cut Tape (CT) Package / Case: R-6, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: R-6 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
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