Продукція > TAIWAN SEMICONDUCTOR CORPORATION > HER601G A0G
HER601G A0G

HER601G A0G Taiwan Semiconductor Corporation

HER601G%20SERIES_H2104.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 6A R-6
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Box (TB)
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Технічний опис HER601G A0G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 50V 6A R-6, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 50 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: R-6, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: R-6, Axial, Packaging: Tape & Box (TB).