Продукція > HUAJING > HFGM100D12V1
HFGM100D12V1

HFGM100D12V1 HUAJING


pVersion=0046&contRep=ZT&docId=005056AB281E1FD094839D70FCB700E1&compId=HFGM100D.pdf?ci_sign=13ae9f32655171dafe902618a15f219bac067d52 Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Topology: IGBT half-bridge
Technology: PT
Type of semiconductor module: IGBT
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Collector current: 100A
Semiconductor structure: transistor/transistor
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Case: V1
Mechanical mounting: screw
на замовлення 20 шт:

термін постачання 21-30 дні (днів)
Кількість Ціна
1+3572.81 грн
3+2983.41 грн
12+2636.63 грн
В кошику  од. на суму  грн.
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Технічний опис HFGM100D12V1 HUAJING

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Topology: IGBT half-bridge, Technology: PT, Type of semiconductor module: IGBT, Application: for UPS; Inverter, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±30V, Collector current: 100A, Semiconductor structure: transistor/transistor, Pulsed collector current: 200A, Max. off-state voltage: 1.2kV, Case: V1, Mechanical mounting: screw.