HFGM100D12V1 HUAJING
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Technology: PT
Semiconductor structure: transistor/transistor
Case: V1
Gate-emitter voltage: ±30V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
| Кількість | Ціна |
|---|---|
| 1+ | 4365.45 грн |
| 3+ | 3648.18 грн |
| 12+ | 3224.23 грн |
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Технічний опис HFGM100D12V1 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Application: for UPS; Inverter, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Technology: PT, Semiconductor structure: transistor/transistor, Case: V1, Gate-emitter voltage: ±30V, Collector current: 100A, Pulsed collector current: 200A, Max. off-state voltage: 1.2kV.