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HFGM100D12V1 HUAJING


HFGM100D.pdf
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: V1
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mechanical mounting: screw
Technology: PT
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+4386.73 грн
3+3666.22 грн
В кошику  од. на суму  грн.
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Технічний опис HFGM100D12V1 HUAJING

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Collector current: 100A, Case: V1, Application: for UPS; Inverter, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±30V, Pulsed collector current: 200A, Mechanical mounting: screw, Technology: PT.