HFGM100D12V1 HUAJING
Виробник: HUAJINGCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Topology: IGBT half-bridge
Technology: PT
Type of semiconductor module: IGBT
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Collector current: 100A
Semiconductor structure: transistor/transistor
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Case: V1
Mechanical mounting: screw
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 3572.81 грн |
| 3+ | 2983.41 грн |
| 12+ | 2636.63 грн |
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Технічний опис HFGM100D12V1 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Topology: IGBT half-bridge, Technology: PT, Type of semiconductor module: IGBT, Application: for UPS; Inverter, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±30V, Collector current: 100A, Semiconductor structure: transistor/transistor, Pulsed collector current: 200A, Max. off-state voltage: 1.2kV, Case: V1, Mechanical mounting: screw.