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HFGM100D12V1

HFGM100D12V1 HUAJING


HFGM100D.pdf Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Topology: IGBT half-bridge
Mechanical mounting: screw
Case: V1
Type of semiconductor module: IGBT
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 100A
Pulsed collector current: 200A
Technology: PT
Max. off-state voltage: 1.2kV
на замовлення 20 шт:

термін постачання 21-30 дні (днів)
Кількість Ціна
1+3648.13 грн
3+3046.28 грн
12+2692.89 грн
В кошику  од. на суму  грн.
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Технічний опис HFGM100D12V1 HUAJING

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Topology: IGBT half-bridge, Mechanical mounting: screw, Case: V1, Type of semiconductor module: IGBT, Application: for UPS; Inverter, Electrical mounting: FASTON connectors; screw, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±30V, Collector current: 100A, Pulsed collector current: 200A, Technology: PT, Max. off-state voltage: 1.2kV.