HFGM200D12V3 HUAJING
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 400A
Mechanical mounting: screw
Technology: PT
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Технічний опис HFGM200D12V3 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Collector current: 200A, Case: V3 62MM, Application: for UPS; Inverter, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±30V, Pulsed collector current: 400A, Mechanical mounting: screw, Technology: PT.