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HFGM75D12V1

HFGM75D12V1 HUAJING

HFGM75D.pdf
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Technology: PT
Mechanical mounting: screw
Pulsed collector current: 200A
Application: for UPS; Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: V1
Gate-emitter voltage: ±30V
Collector current: 75A
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+4033.52 грн
3+3368.85 грн
В кошику  од. на суму  грн.
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Технічний опис HFGM75D12V1 HUAJING

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1, Topology: IGBT half-bridge, Type of semiconductor module: IGBT, Technology: PT, Mechanical mounting: screw, Pulsed collector current: 200A, Application: for UPS; Inverter, Max. off-state voltage: 1.2kV, Electrical mounting: FASTON connectors; screw, Semiconductor structure: transistor/transistor, Case: V1, Gate-emitter voltage: ±30V, Collector current: 75A.