
HFGM75D12V1 HUAJING
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 75A
Pulsed collector current: 200A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V1
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 75A
Pulsed collector current: 200A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V1
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
1+ | 2400.73 грн |
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Технічний опис HFGM75D12V1 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±30V, Collector current: 75A, Pulsed collector current: 200A, Application: for UPS; Inverter, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: PT, Topology: IGBT half-bridge, Type of semiconductor module: IGBT, Case: V1, кількість в упаковці: 1 шт.
Інші пропозиції HFGM75D12V1 за ціною від 2880.88 грн до 2880.88 грн
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HFGM75D12V1 | Виробник : HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 75A Pulsed collector current: 200A Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: PT Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: V1 кількість в упаковці: 1 шт |
на замовлення 12 шт: термін постачання 14-21 дні (днів) |
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