HGTA32N60E2 Harris Corporation
Виробник: Harris CorporationDescription: 32A, 600V N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-218-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
Supplier Device Package: TO-218-5
Gate Charge: 265 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 208 W
на замовлення 215 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 763.64 грн |
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Технічний опис HGTA32N60E2 Harris Corporation
Description: 32A, 600V N-CHANNEL IGBT, Packaging: Bulk, Package / Case: TO-218-5, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A, Supplier Device Package: TO-218-5, Gate Charge: 265 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 208 W.