HGTA32N60E2 Harris Corporation
Виробник: Harris Corporation
Description: IGBT 600V 50A TO-218-5
Power - Max: 208 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 265 nC
Supplier Device Package: TO-218-5
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-5
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 27+ | 837.78 грн |
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Технічний опис HGTA32N60E2 Harris Corporation
Description: IGBT 600V 50A TO-218-5, Power - Max: 208 W, Current - Collector Pulsed (Icm): 200 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 50 A, Part Status: Active, Gate Charge: 265 nC, Supplier Device Package: TO-218-5, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-218-5, Packaging: Bulk.