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HGTG12N60B3 ON Semiconductor

Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 27A 104000mW 3-Pin(3+Tab) TO-247 Rail

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Технічний опис HGTG12N60B3 ON Semiconductor

Description: IGBT 600V 27A 104W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 26ns/150ns, Switching Energy: 150µJ (on), 250µJ (off), Test Condition: 480V, 12A, 25Ohm, 15V, Gate Charge: 51 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 27 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 110 A, Power - Max: 104 W.

Інші пропозиції HGTG12N60B3

Фото	Назва	Виробник	Інформація	Доступність	Ціна без ПДВ
	HGTG12N60B3	Виробник : onsemi	Description: IGBT 600V 27A 104W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 26ns/150ns Switching Energy: 150µJ (on), 250µJ (off) Test Condition: 480V, 12A, 25Ohm, 15V Gate Charge: 51 nC Part Status: Obsolete Current - Collector (Ic) (Max): 27 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 104 W	товар відсутній