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HGTP10N40E1D

HGTP10N40E1D Harris Corporation

HRISD027-3-20.pdf?t.download=true&u=5oefqw
Виробник: Harris Corporation
Description: 17.5A, 400V, N-CHANNEL IGBT
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 17.5 A
Part Status: Active
Gate Charge: 19 nC
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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Технічний опис HGTP10N40E1D Harris Corporation

Description: 17.5A, 400V, N-CHANNEL IGBT, Power - Max: 75 W, Voltage - Collector Emitter Breakdown (Max): 400 V, Current - Collector (Ic) (Max): 17.5 A, Part Status: Active, Gate Charge: 19 nC, Supplier Device Package: TO-220, Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.