HIP2101IR4T Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: IC GATE DRVR HALF-BRIDGE 12DFN
Mounting Type: Surface Mount
Package / Case: 12-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 2A, 2A
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 10ns, 10ns
Supplier Device Package: 12-DFN (4x4)
High Side Voltage - Max (Bootstrap): 114 V
Input Type: Non-Inverting
Voltage - Supply: 9V ~ 14V
Operating Temperature: -55°C ~ 150°C (TJ)
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Технічний опис HIP2101IR4T Renesas Electronics Corporation
Description: IC GATE DRVR HALF-BRIDGE 12DFN, Mounting Type: Surface Mount, Package / Case: 12-VFDFN Exposed Pad, Packaging: Tape & Reel (TR), DigiKey Programmable: Not Verified, Current - Peak Output (Source, Sink): 2A, 2A, Logic Voltage - VIL, VIH: 0.8V, 2.2V, Gate Type: MOSFET (N-Channel), Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Independent, Rise / Fall Time (Typ): 10ns, 10ns, Supplier Device Package: 12-DFN (4x4), High Side Voltage - Max (Bootstrap): 114 V, Input Type: Non-Inverting, Voltage - Supply: 9V ~ 14V, Operating Temperature: -55°C ~ 150°C (TJ).