HIP6603BECB-T Renesas Electronics America Inc
Виробник: Renesas Electronics America Inc
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 20ns, 20ns
Supplier Device Package: 8-SOIC-EP
High Side Voltage - Max (Bootstrap): 15 V
Input Type: Non-Inverting
Voltage - Supply: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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Технічний опис HIP6603BECB-T Renesas Electronics America Inc
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, DigiKey Programmable: Not Verified, Gate Type: N-Channel MOSFET, Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Synchronous, Rise / Fall Time (Typ): 20ns, 20ns, Supplier Device Package: 8-SOIC-EP, High Side Voltage - Max (Bootstrap): 15 V, Input Type: Non-Inverting, Voltage - Supply: 10.8V ~ 13.2V, Operating Temperature: 0°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Packaging: Tape & Reel (TR).